Analysis of Subthreshold Swing Mechanism by Device Parameter of Asymmetric Double Gate MOSFET
نویسندگان
چکیده
منابع مشابه
Symmetric and Asymmetric Double Gate MOSFET Modeling
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...
متن کاملComparison study of Drain Current, Subthreshold Swing and DIBL of III-V Heterostructure and Silicon Double Gate MOSFET
We investigate the performances of 18 nm gate length AlInN/GaN, InP/InGaAs heterostructure and a Silicon double gate MOSFET, using 2D Sentaurus TCAD simulation. The heterostructure device uses lattice-matched wideband Al0.83In0.17N /InP and narrowband GaN / In0.53Ga0.47As layers, along with high-k Al2O3 as the gate dielectric, while silicon based device uses SiO2 gate dielectric. The device has...
متن کاملPerformance of Double Gate SOI MOSFET
The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...
متن کاملModelling of Parasitic Capacitances for Single-gate, Double-gate and Independent Double-gate MOSFET
This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...
متن کاملInfluence of High-κ Spacer on Analog/RF Performance of Asymmetric Underlap Double Gate MOSFET
Impact of high-κ spacer in Asymmetric underlap double gate MOS transistor is systematically investigated with the help of a two dimensional device simulator. A significant improvement in ON current, transconductance and intrinsic gain is observed in the device using high-κ spacer material. However due to higher capacitances, device with high-κ spacer shows smaller unity gain cut-off frequency c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering
سال: 2015
ISSN: 2234-4772
DOI: 10.6109/jkiice.2015.19.1.156